Nevertheless, since the changeover between the gas supply intervals has been performed by opening and shutting the management valve, Dampfensale the control valve is required to be opened and closed very steadily. In line with the vapor progress apparatus of an embodiment, the partition plates prolong radially from the center line of the cylindrical portion to the inside wall of the cylindrical portion and intersect each other at a specified angle, where the angle is ready in keeping with the durations of the periods by which the material gases are provided to the substrate.
According to the vapor growth apparatus of an embodiment, the partition plates extend radially from the center line to the inside wall of the cylindrical portion and dampfergunstige (https://www.dampfergunstige.de) intersect one another at a specified angle, and the angle is set in accordance with a duration of a interval through which each of the fabric gases are supplied to the substrate. In order to achieve the aforementioned objective, the present invention gives a vapor development apparatus for growing a compound semiconductor ezigarettenonsale layer on a floor of a substrate maintained at a specified temperature in a progress chamber by alternately supplying a cation materials gas and an anion materials gas and reacting the gases, wherein the growth chamber has a cylindrical portion which extends in a course from an upstream aspect to a downstream side and an end plate which closes an upstream end portion of the cylindrical portion, the end plate has in specified portions thereof a material gas supply inlet for supplying the cation material gas into the cylindrical portion and a cloth gas supply inlet for supplying the anion materials gas into the cylindrical portion, and additional comprising exhaust means for 24ezigarette discharging fuel inside the cylindrical portion from a downstream facet of the cylindrical portion, a substrate holder supplied between the upstream facet and the downstream aspect of the cylindrical portion and having a substrate holding floor, gas separation means for forming a plurality of material gasoline supply areas the place the fabric gases are independently supplied to the substrate holding surface by separating flow paths of the material gases extending from the fabric gasoline provide inlets to the substrate holding surface, and drive means for rotating the substrate holder with the substrate set on the substrate holding surface round a center line of the cylindrical portion.
Within the above-talked about condition, dampfensale the cation material gasoline and the anion materials gas are supplied from the fabric gasoline provide inlets offered at the tip plates of the growth chamber into the cylindrical portion. Since the partition plates 6A and ezigarettegunstig 6B and the separation gas are concurrently used, the movement paths of the fabric gases may be further surely separated from each other. GaAs substrate Diethyl zinc (DEZ) of one system is used as a cation materials gas, hydrogen selenide of 1 system is used as an anion material gas, and hydrogen of two systems are used as a separation fuel.